LatticeXP2 offers FlashBak capability, which is a way to store the data in the EBRs to the Flash
memory upon user command. This protects the user's data from being lost when the system is powered off.
The CS100F 90nm FLASH process is specified for
10,000 cycles programming, and will
have >20yr data retention capability of the device. During the qualification, all devices used for data retention study were pre-conditioned using 10,000 erase cycles. This ensures the LatticeXP2 can meet the data retention expectation after cycling the FLASH memory. This data is available in our extended device reliability reports or the LatticeXP2 Product Family (now available online at www.latticesemi.com go to the Quality and Reliability page):